✦ LIBER ✦

The chemisorption of C60 on Si(100)-(2 × 1)

✍ Scribed by A.V. Hamza; M. Balooch

Publisher: Elsevier Science
Year: 1993
Tongue: English
Weight: 452 KB
Volume: 201
Category: Article
ISSN: 0009-2614
DOI: 10.1016/0009-2614(93)85092-3

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✦ Synopsis

The adsorption of C, on Si( lOO)-(2 x 1) has been investigated by temperature-programmed desorption (TPD) spectroscopy and Auger electron spectroscopy (AES). The binding of the first monolayer of Cm to the clean (2x 1) silicon( ) is strong; such that the carbon overlayer is not removed until the substrate is heated to over I 150 K. After desorption ofthe multilayer peak by heating to 600 K, a graphite-like carbon AES peak is observed. Heating of the C,, monolayer between 900 and 1150 K causes the carbon AES peak shape to change and the ratio of the carbon peak height to the silicon peak height to increase, indicating a change in the structure of the fdm. The lower bound for the strength of the C60 to Si( 100)-(2x 1) bond is estimated to be 56 kcal/mol and the CsO molecule dissociates before this bond is thermally activated. This result offers an explanation of the recent enhanced nucleation of diamond by C, and CT0 on Si( 100).

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