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Identification of GeH3 on Si(100)-(2×1) by the decomposition of digermane

✍ Scribed by Debra-Ann Klug; Wei Du; C.Michael Greenlief


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
495 KB
Volume
197
Category
Article
ISSN
0009-2614

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✦ Synopsis


The low-temperature adsorption and decomposition of digermane on Si( 100) has been investigated by ultraviolet photoelectron spectroscopy. Exposure of Ge2H, to Si ( 100) at 110 K results in molecular adsorption and ab initio calculations of gas phase Ge2H6 are used to help interpret the low temperature ultraviolet photoelectron spectrum. Upon warming the GerH, covered surface to 150 K, Ge-Ge bond cleavage occurs and a surface covered with germyl groups is observed.


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