The calculation of electronic parameters of an Au/β-carotene/n-Si Schottky barrier diode

✍ Scribed by M.E. Aydın; T. Kılıçoğlu; K. Akkılıç; H. Hoşgören

• Book ID: 104079539
• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 150 KB
• Volume: 381
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2005.12.254

✦ Synopsis

An Au/b-carotene/n-Si Schottky barrier diode has been fabricated by adding a solution of the non-polymeric organic compound bcarotene in chloroform on top of an n-Si substrate, and then evaporating the solvent. The b-carotene/n-Si contact shows rectifying behaviour and the reverse curves exhibit a weak bias voltage dependence. The barrier height and ideality factor values of 0.80 eV and 1.32, respectively for this structure, have been obtained from the forward bias current-voltage (I-V) characteristics. The energy distribution of the interface state density located in the inorganic semiconductor band gap at the organic compound/inorganic semiconductor interface in the energy range (E c -0.76) to (E c -0.53) eV have been determined from the I-V characteristics. The interface state density N ss ranges from 5.84 Â 10 12 cm À2 eV À1 in (E c -0.76) eV to 8.83 Â 10 13 cm À2 eV À1 in (E c -0.53) eV. The interface state density has an exponential rise with bias from the mid-gap towards the bottom of the conduction band.