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The built-in fields and interfacial properties of a-Si:H/a-SiNx:H multilayers studied by electroabsorption spectroscopy

✍ Scribed by Liu Xiangna; Zhao Zhouyin; Wang Zhichao; Wang yong; Li Wenkai


Book ID
117147196
Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
268 KB
Volume
137-138
Category
Article
ISSN
0022-3093

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Induced defects in a-Si:H/a-SiNx:H multi
✍ W.Z. Gu; Z.C. Wang; M.X. Sun πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 125 KB

The induced defects and their distribution in a-Si:H/a-SiN x :H multilayers are determined using an electromagnetic technique (EMT) and positron annihilation technique (PAT). It is found that the distributions of the induced defects in the interface regions on both sides of the a-Si:H sublayer are a