We have computed the homogeneous barrier height (BH) of Au/n-Si Schottky diodes (SDs). Thereby, Au/n-Si/Au-Sb SDs (24 dots) have identically been prepared, and the effective BHs and ideality factors of these diodes have been calculated from their experimental forward bias current-voltage (I2V ) and
✦ LIBER ✦
The barrier height enhancement of the Au/n-Si/Al Schottky barrier diode by electrochemically formed an organic Anthracene layer on n-Si
✍ Scribed by Çaldıran, Z.; Deniz, A.R.; Aydoğan, Ş.; Yesildag, A.; Ekinci, D.
- Book ID
- 122985810
- Publisher
- Elsevier Science
- Year
- 2013
- Tongue
- English
- Weight
- 548 KB
- Volume
- 56
- Category
- Article
- ISSN
- 0749-6036
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