The selective wet etching characteristics of GaAS/A1 x Ga1\_ ,. As~ \_ x systems in citric acid-hydrogen peroxide solution have been studied for x = 0.15, x = 0.2 and x = 0.3 respectively. A 4:1 ratio of citric acid (50% by weight)-H202 solution was found to be a better selective etchant than the mo
β¦ LIBER β¦
The Applications of Citric Acid/Hydrogen Peroxide Etching Solutions in the Processing of Pseudomorphic MODFETs
β Scribed by Mao, B. -Y.
- Book ID
- 121697135
- Publisher
- The Electrochemical Society
- Year
- 1994
- Tongue
- English
- Weight
- 700 KB
- Volume
- 141
- Category
- Article
- ISSN
- 0013-4651
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