Selective wet etching of a GaAsAlxGa1−xAs heterostructure with citric acid-hydrogen peroxide solutions for pseudomorphic GaAs/AlxGa1−xAs/InyGa1−yAs heterojunction field effect transister fabrication
✍ Scribed by H.J. Lee; M.S. Tse; K. Radhakrishnan; K. Prasad; J. Weng; S.F. Yoon; X. Zhou; H.S. Tan; S.K. Ting; Y.C. Leong
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 300 KB
- Volume
- 35
- Category
- Article
- ISSN
- 0921-5107
No coin nor oath required. For personal study only.
✦ Synopsis
The selective wet etching characteristics of GaAS/A1 x Ga1_ ,. As~ _ x systems in citric acid-hydrogen peroxide solution have been studied for x = 0.15, x = 0.2 and x = 0.3 respectively. A 4:1 ratio of citric acid (50% by weight)-H202 solution was found to be a better selective etchant than the more commonly used NH4OH-H202 solutions. The selectivity obtained was more than 110 for x = 0.3. The simple and reliable selective wet etchant was applied to the gate recess etching in the fabrication of pseudomorphic GaAs/AlxGa ~ xAs/In,.Ga~_,.As heterojunction field effect transistors.