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The application of channeling to masked ion beam lithography

โœ Scribed by D.K. Allison; R.R. Hart

Book ID
113281354
Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
357 KB
Volume
56-57
Category
Article
ISSN
0168-583X

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Application of highly charged Ar ion bea
Application of highly charged Ar ion beams to ion beam lithography
โœ S. Momota; Y. Nojiri; Y. Hamagawa; K. Hamaguchi; J. Taniguchi; H. Ohno ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 91 KB

Ion beam lithography (IBL) is a very useful tool for the fabrication of nano-structures. In order to expand the applicability of IBL by using highly charged ions (HCI), Ar 1+ and Ar 9+ ions were irradiated onto spin-on-glass (SOG) through a stencil mask. The step structure was successfully fabricate