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The 17th International Symposium on Power Semiconductor Devices and ICs (ISPSD'05)

Book ID: 114617641
Publisher: IEEE
Year: 2004
Tongue: English
Weight: 643 KB
Volume: 51
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2004.838611

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📜 SIMILAR VOLUMES

[IEEE ISPSD '05. The 17th International

[IEEE ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. - Santa Barbara, CA, USA (May 23-26, 2005)] Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. - Numerical and Experimental Analysis of Single Crystal Diamond Schottky Barrier Diodes

✍ S. J. Rashid, L. Coulbeck 📂 Article 📅 2005 🏛 IEEE ⚖ 591 KB

[IEEE ISPSD '05. The 17th International

[IEEE ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. - Santa Barbara, CA, USA (May 23-26, 2005)] Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. - Great Improvement in Turn-On Power Dissipation of IGBTs with an Extra Gate Charging Function

✍ Y. Onozawa, M. Otsuki 📂 Article 📅 2005 🏛 IEEE ⚖ 756 KB

[IEEE ISPSD '05. The 17th International

[IEEE ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. - Santa Barbara, CA, USA (May 23-26, 2005)] Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. - Multi Chip Module with Minimum Parasitic Inductance for New Generation Voltage Regulator

✍ Yusuke Kawaguchi, Tomohiro Kawano 📂 Article 📅 2005 🏛 IEEE ⚖ 583 KB

[IEEE ISPSD '05. The 17th International

[IEEE ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. - Santa Barbara, CA, USA (May 23-26, 2005)] Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. - The Field Charge Extraction (FCE) Diode A Novel Technology for Soft Recovery High Voltage Diodes

✍ A. Kopta, M. Rahimo 📂 Article 📅 2005 🏛 IEEE ⚖ 885 KB

[IEEE ISPSD '05. The 17th International

[IEEE ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. - Santa Barbara, CA, USA (May 23-26, 2005)] Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. - High Breakdown Voltage GaN Schottky Barrier Diode employing Floating Metal Rings on AlGaN/GaN Hetero-junction

✍ Seung-Chul Lee, Min-Woo Ha 📂 Article 📅 2005 🏛 IEEE ⚖ 512 KB

[IEEE ISPSD '05. The 17th International

[IEEE ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. - Santa Barbara, CA, USA (May 23-26, 2005)] Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. - A Study of Switching-Self-Clamping-Mode �SSCM� as an Over-voltage Protection Feature in High Voltage IGBTs

✍ M. Rahimo, A. Kopta 📂 Article 📅 2005 🏛 IEEE ⚖ 837 KB