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[IEEE ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. - Santa Barbara, CA, USA (May 23-26, 2005)] Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. - High Breakdown Voltage GaN Schottky Barrier Diode employing Floating Metal Rings on AlGaN/GaN Hetero-junction

✍ Scribed by Seung-Chul Lee, Min-Woo Ha

Book ID: 111989323
Publisher: IEEE
Year: 2005
Weight: 512 KB
Volume: 0
Category: Article
ISBN-13: 9780780388901
DOI: 10.1109/ispsd.2005.1487997

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