13 , n = 1) have been synthesized, characterized by 1 H, 13 C, 19 F and 119 Sn NMR, and evaluated as precursors for the atmospheric pressure chemical vapour deposition of fluorine-doped SnO 2 thin films. All precursors were sufficiently volatile in the range 84-136 β’ C and glass substrate temperatur
β¦ LIBER β¦
Textured Fluorine-Doped Tin Dioxide Films formed by Chemical Vapour Deposition
β Scribed by Davinder S. Bhachu; Mathew R. Waugh; Katharina Zeissler; Dr. Will R. Branford; Prof. Ivan P. Parkin
- Publisher
- John Wiley and Sons
- Year
- 2011
- Tongue
- English
- Weight
- 944 KB
- Volume
- 17
- Category
- Article
- ISSN
- 0947-6539
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