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Temperature investigation of the gate-drain diode of power GaAs MESFET with low-temperature-grown (Al)GaAs passivation

✍ Scribed by L. -W. Yin; N. X. Nguyen; Y. Hwang; J. P. Ibbetson; R. M. Kolbas; A. C. Gossard; U. K. Mishra

No coin nor oath required. For personal study only.

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