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Temperature-independent pressure sensors using polycrystalline silicon strain gauges

✍ Scribed by H. Schäfer; V. Graeger; R. Kobs


Publisher
Elsevier Science
Year
1989
Weight
441 KB
Volume
17
Category
Article
ISSN
0250-6874

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Rezorewstlve sdlcon-based pressure sensors have been fabncated which are capable of hlghpreclslon operation at temperatures as high as 250 "C These devices are fabncated by a umque &con fusion bonding process m which resistors from one wafer are bonded to the oxldlzed surface of a second wafer The m