Temperature evolution of photoluminescence from an In0.22Ga0.78Sb/GaSb single quantum well
โ Scribed by R Kudrawiec; L Bryja; J Misiewicz; A Forchel
- Publisher
- Elsevier Science
- Year
- 2004
- Tongue
- English
- Weight
- 132 KB
- Volume
- 110
- Category
- Article
- ISSN
- 0921-5107
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โฆ Synopsis
This article investigates photoluminescence (PL) spectra of an In 0.22 Ga 0.78 Sb/GaSb single quantum well (SQW) in 10-160 K temperature range. Emissions associated with free exciton and free carrier recombinations were observed. Line-shape analysis of PL spectra was performed by means of a statistical model which includes contributions of free exciton and free carrier recombinations. This model reproduces experimental PL data well and satisfactorily enables quantitative assessment of the relative contributions of the two types of transitions over the whole temperature range. The intensity ratio of the two transitions was interpreted on the basis of the law of mass action.
๐ SIMILAR VOLUMES
Photoreflectance and phototransmittance have been used for the investigation of optical transitions in an In 0.22 Ga 0.78 Sb/GaSb single quantum well grown by molecular beam epitaxy on a GaSb substrate. High sensitivity of these photomodulation techniques has allowed the observation of excited state
The 2-dimensional electron gas (2DEG) in an Al0.6Ga0.aSb/inAs single quantum well is studied using cyclotron resonance and Shubnikov -de Haas (SdH) techniques. The effective mass (m\*) of the 2DEG was obtained from the peak positions of the cyclotron resonance transmission spectra. The results exhib