Infrared photomodulation spectroscopy of an In 0.22Ga 0.78Sb/GaSb single quantum well

✍ Scribed by R. Kudrawiec; G. Sek; K. Ryczko; J. Misiewicz; A. Forchel

• Publisher: Elsevier Science
• Year: 2002
• Tongue: English
• Weight: 92 KB
• Volume: 32
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1006/spmi.2002.1053

✦ Synopsis

Photoreflectance and phototransmittance have been used for the investigation of optical transitions in an In 0.22 Ga 0.78 Sb/GaSb single quantum well grown by molecular beam epitaxy on a GaSb substrate. High sensitivity of these photomodulation techniques has allowed the observation of excited state transitions including parity forbidden ones, in contrast to standard spectroscopic methods which usually probe only the fundamental transition. The transition energies have been calculated using the envelope function approach and taking into account strains and excitonic effects. Evidence of the great advantage of modulation spectroscopy in the infrared region (1.5-1.8 µm) in comparison to standard photoluminescence, reflectivity and transmission coefficient measurements has been shown.