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Temperature effect on the roughness of the formation interface of p-type porous silicon

✍ Scribed by Setzu, S.; Lerondel, G.; Romestain, R.

Book ID
115502822
Publisher
American Institute of Physics
Year
1998
Tongue
English
Weight
332 KB
Volume
84
Category
Article
ISSN
0021-8979

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## Abstract We have carried out interferometric measurements of interface roughness in‐situ during electrochemical etching of p‐type porous silicon (PS) at room temperature. We found that at a certain porosity (∼70%) and with an electrolyte where a low fraction (10%) of the ethanol was replaced wit