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Temperature dependent model for threshold voltage and subthreshold slope of strained-Si channel MOSFETs with a polysilicon gate

✍ Scribed by Biswas, Abhijit; Bhattacherjee, Swagata


Book ID
122427065
Publisher
Elsevier Science
Year
2014
Tongue
English
Weight
705 KB
Volume
54
Category
Article
ISSN
0026-2714

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