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Modelling of threshold voltage and subthreshold slope of strained-Si MOSFETs including quantum effects

✍ Scribed by Mukhopadhyay, Bratati; Biswas, Abhijit; Basu, P K; Eneman, G; Verheyen, P; Simoen, E; Claeys, C

No coin nor oath required. For personal study only.

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