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Compact modeling of the threshold voltage in silicon nanowire MOSFET including 2D-quantum confinement effects

✍ Scribed by Autran, J. L.; Nehari, K.; Munteanu, D.

Book ID: 120359728
Publisher: Taylor and Francis Group
Year: 2005
Tongue: English
Weight: 372 KB
Volume: 31
Category: Article
ISSN: 0892-7022
DOI: 10.1080/08927020500314027

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