Analytical model for the threshold voltage of III–V nanowire transistors including quantum effects

✍ Scribed by Marin, E.G.; Ruiz, F.G.; Tienda-Luna, I.M.; Godoy, A.; Gámiz, F.

• Book ID: 121961164
• Publisher: Elsevier Science
• Year: 2014
• Tongue: English
• Weight: 731 KB
• Volume: 92
• Category: Article
• ISSN: 0038-1101
• DOI: 10.1016/j.sse.2013.10.022