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[IEEE 2012 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) - Bangkok, Thailand (2012.12.3-2012.12.5)] 2012 IEEE International Conference on Electron Devices and Solid State Circuit (EDSSC) - A quasi-2D threshold voltage model for short-channel junctionless (JL) double-gate MOSFETs

✍ Scribed by Chiang, Te-Kuang

Book ID: 121296129
Publisher: IEEE
Year: 2012
Weight: 764 KB
Category: Article
ISBN: 1467356956
DOI: 10.1109/EDSSC.2012.6482877

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