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[IEEE 2012 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) - Bangkok, Thailand (2012.12.3-2012.12.5)] 2012 IEEE International Conference on Electron Devices and Solid State Circuit (EDSSC) - Simulation study on FinFET with tri-material gate

✍ Scribed by Li, Cong; Zhuang, Yiqi; Li Zhang,

Book ID: 121381627
Publisher: IEEE
Year: 2012
Weight: 618 KB
Category: Article
ISBN: 1467356956
DOI: 10.1109/EDSSC.2012.6482802

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