𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Temperature-Dependent Effective Masses in III-V Compound Semiconductors

✍ Scribed by A. C. Sharma; N. M. Ravindra; S. Auluck; V. K. Srivastava


Publisher
John Wiley and Sons
Year
1983
Tongue
English
Weight
421 KB
Volume
120
Category
Article
ISSN
0370-1972

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Effective Masses in III-V Compounds
✍ J. KoΕ‚odziejczak; S. Ε»ukotyΕ„ski; H. Stramska πŸ“‚ Article πŸ“… 1966 πŸ› John Wiley and Sons 🌐 English βš– 573 KB
Extended defects in III-V semiconductor
✍ Dr. G. Ferenczi; L. DΓ³zsa πŸ“‚ Article πŸ“… 1981 πŸ› John Wiley and Sons 🌐 English βš– 315 KB πŸ‘ 1 views

## Abstract A new class of defects characterized by inherent non‐exponential capture and emission processes was observed. A theory – based on the potential barrier model – is proposed to describe the measured DLTS and capacitance transient data. It is argued that these defects are related to disloc

Transmission electron mircoscopy of inte
πŸ“‚ Article πŸ“… 1978 πŸ› Elsevier Science 🌐 English βš– 341 KB

together with tight-binding calculations. We have considered several different types of structural models, including the relaxation model in which surface Ga atoms move into and As atoms move out of, the surface by an amount such that the plane through the nearestneighbour Ga and As atoms makes a ti