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Recent progress in characterization of III–V compound semiconductors

✍ Scribed by Q.H. Hua; Y.Z. Sun; S.R. Xue; G.P. Li


Publisher
Elsevier Science
Year
1985
Weight
658 KB
Volume
11
Category
Article
ISSN
0146-3535

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Extended defects in III-V semiconductor
✍ Dr. G. Ferenczi; L. Dózsa 📂 Article 📅 1981 🏛 John Wiley and Sons 🌐 English ⚖ 315 KB 👁 1 views

## Abstract A new class of defects characterized by inherent non‐exponential capture and emission processes was observed. A theory – based on the potential barrier model – is proposed to describe the measured DLTS and capacitance transient data. It is argued that these defects are related to disloc