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Temperature dependent characteristics of a PIN avalanche photodiode (APD) in Ge, Si and GaAs

✍ Scribed by Y. K. Su; C. Y. Chang; T. S. Wu


Book ID
104847499
Publisher
Springer
Year
1979
Tongue
English
Weight
482 KB
Volume
11
Category
Article
ISSN
0306-8919

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Temperature dependent characteristics of
✍ S. Masudy-Panah; M.K. Moravvej-Farshi; M. Jalali πŸ“‚ Article πŸ“… 2009 πŸ› Elsevier Science 🌐 English βš– 521 KB

In this paper, using a nonlocal analysis we have extracted the temperature dependent ionization coefficients and threshold energies of submicron GaAs avalanche photodiodes (APDs) with multiplication region thicknesses as narrow as 49 nm, from electron and hole injection photo-multiplication processe