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Temperature dependence of threshold current for a quantum-well heterostructure laser

โœ Scribed by K. Hess; B.A. Vojak; N. Holonyak Jr.; R. Chin; P.D. Dapkus

Publisher
Elsevier Science
Year
1980
Tongue
English
Weight
496 KB
Volume
23
Category
Article
ISSN
0038-1101

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The Hydrostatic Pressure Dependence of the Threshold Current in 1.3 ฮผm InGaAsP Quantum Well Semiconductor Diode Lasers
โœ A. F. Phillips; S. J. Sweeney; A. R. Adams; P. J. A. Thijs ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 191 KB ๐Ÿ‘ 1 views

We have measured the change in threshold current and lasing photon energy as a function of pressure in 1.3 mm semiconductor quantum well lasers. We observe a decrease in threshold current with increasing pressure indicative of an Auger recombination process which decreases as the band gap increases.