We study low temperature electron mobility µ n in a GaAs/Al x Ga 1-x As coupled double quantum well structure. Both the extreme barriers are δ-doped with Si so that the electrons diffuse into the adjacent wells forming two sheets of two-dimensional electron gas (2DEG) separated by a thin central bar
Temperature dependence of electron mobility in a free — Standing quantum well
✍ Scribed by N Bannov; V Aristov; V Mitin
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 351 KB
- Volume
- 93
- Category
- Article
- ISSN
- 0038-1098
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