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Temperature dependence of localized and free exciton lifetime in CdZnSSe/ZnSSe single quantum wells

โœ Scribed by H. Wang; K.S. Wong; G.K.L. Wong; K.K. Law


Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
107 KB
Volume
24
Category
Article
ISSN
0749-6036

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โœฆ Synopsis


Time-integrated and time-resolved photoluminescence of Cd 0.3 Zn 0.7 S 0.06 Se 0.94 / ZnS 0.06 Se 0.94 single quantum wells (QW) have been studied. The radiative recombination process is dominated by localized excitons which have a constant lifetime of โˆผ300 ps when the temperature is less than 130 K. As the temperature increases, localized excitons are thermally activated to form free excitons which are stable up to room temperature because of the large exciton binding energy and strong confinement of electrons and holes in these QWs. Free exciton radiative recombination is thus dominated when temperature is in the 130 K to room temperature (295 K) range. The free exciton decay time of โˆผ300 ps at 130 K increased linearly to โˆผ1ns at 295 K. This linear increase in exciton lifetime with temperature agrees with the theoretical prediction by considering the conservation of momentum requirement for radiative recombination for excitons in QW.


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