Photo-pumped lasing properties have been investigated in a CdSe/ZnSe/ZnSSE single quantum wells (SQWs) with the well-layer thickness (L W ) of 1, 2 and 3 monolayer (ML). At 20 K, the laser threshold for the SQW with L W = 1 ML was the lowest in spite of the smallest active layer thickness. The carri
Temperature dependence of localized and free exciton lifetime in CdZnSSe/ZnSSe single quantum wells
โ Scribed by H. Wang; K.S. Wong; G.K.L. Wong; K.K. Law
- Publisher
- Elsevier Science
- Year
- 1998
- Tongue
- English
- Weight
- 107 KB
- Volume
- 24
- Category
- Article
- ISSN
- 0749-6036
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โฆ Synopsis
Time-integrated and time-resolved photoluminescence of Cd 0.3 Zn 0.7 S 0.06 Se 0.94 / ZnS 0.06 Se 0.94 single quantum wells (QW) have been studied. The radiative recombination process is dominated by localized excitons which have a constant lifetime of โผ300 ps when the temperature is less than 130 K. As the temperature increases, localized excitons are thermally activated to form free excitons which are stable up to room temperature because of the large exciton binding energy and strong confinement of electrons and holes in these QWs. Free exciton radiative recombination is thus dominated when temperature is in the 130 K to room temperature (295 K) range. The free exciton decay time of โผ300 ps at 130 K increased linearly to โผ1ns at 295 K. This linear increase in exciton lifetime with temperature agrees with the theoretical prediction by considering the conservation of momentum requirement for radiative recombination for excitons in QW.
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