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Temperature dependence of the width of the deep-level band in silicon with a high concentration of defects

✍ Scribed by J. Partyka; P. W. Žukowski; P. Wegierek; A. Rodzik; Yu. V. Sidorenko; Yu. A. Shostak

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Temperature dependence of the band gap o

✍ Bludau, W.; Onton, A.; Heinke, W. 📂 Article 📅 1974 🏛 American Institute of Physics 🌐 English ⚖ 195 KB

Temperature Dependence of the Width of t

✍ Bube, Richard H. 📂 Article 📅 1955 🏛 The American Physical Society 🌐 English ⚖ 275 KB

The temperature dependence of band-to-ba

✍ Huldt, L.; Nilsson, N. G.; Svantesson, K. G. 📂 Article 📅 1979 🏛 American Institute of Physics 🌐 English ⚖ 367 KB

Half-width temperature dependence of nit

✍ A.D. Bykov; N.N. Lavrentieva; V.N. Saveliev; L.N. Sinitsa; C. Camy-Peyret; Ch. C 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 338 KB

Temperature dependence of the width of t

✍ F. A. Abramskii 📂 Article 📅 1967 🏛 Springer 🌐 English ⚖ 217 KB

Note on the pressure dependence of deep

✍ T Shimizu 📂 Article 📅 1972 🏛 Elsevier Science 🌐 English ⚖ 133 KB