Temperature dependence of the wannier-stark level width in a semiconductor in a strong electric field

✍ Scribed by A. M. Berezhkovskii; A. A. Ovchinnikov

• Publisher: John Wiley and Sons
• Year: 1983
• Tongue: English
• Weight: 444 KB
• Volume: 117
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/pssb.2221170132

✦ Synopsis

Abstract

Analytical expressions for the level width of the Wannier‐Stark ladder caused by an electron‐phonon interaction are derived. They allow to investigate the dependence of the width on temperature, external field, and semiconductor band parameters. It turns out that with increase in temperature the width associated with acoustic phonons is drastically increased whereas the width associated with optical phonons rises much more slowly. It seems that almost all experiments for finding the Wannier‐Stark ladder had been carried out at too high temperatures when the interaction of an electron with acoustic phonons eliminates the ladder.