The Interband Interaction and the Tunnel Level Width of the Wannier-Stark Ladder in a Semiconductor Subject to a Strong Electric Field

Temperature dependence of the wannier-st

Temperature dependence of the wannier-stark level width in a semiconductor in a strong electric field

✍ A. M. Berezhkovskii; A. A. Ovchinnikov 📂 Article 📅 1983 🏛 John Wiley and Sons 🌐 English ⚖ 444 KB

## Abstract Analytical expressions for the level width of the Wannier‐Stark ladder caused by an electron‐phonon interaction are derived. They allow to investigate the dependence of the width on temperature, external field, and semiconductor band parameters. It turns out that with increase in temper