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Temperature dependence of the radiative recombination coefficient of intrinsic crystalline silicon

✍ Scribed by Trupke, T.; Green, M. A.; Wurfel, P.; Altermatt, P. P.; Wang, A.; Zhao, J.; Corkish, R.

Book ID
111674232
Publisher
American Institute of Physics
Year
2003
Tongue
English
Weight
400 KB
Volume
94
Category
Article
ISSN
0021-8979

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Temperature dependence of the radiative
Temperature dependence of the radiative recombination coefficient in GaAsξ—Έ(Al, Ga)As quantum wells
✍ G.W. 't Hooft; M.R. Leys; H.J. Talen-v.d. Mheen πŸ“‚ Article πŸ“… 1985 πŸ› Elsevier Science 🌐 English βš– 281 KB

The temperature dependence of the radiative recombination coefficient of GaAs-(A1,Ga)As quantum wells grown by MO-VPE was investigated. This was done by measuring the minority carrier lifetime as deduced from photoluminescence decay. The experimental lifetime varies as Ta, where a equals 1.1 for sma