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Temperature dependence of the Hall factor in n–Si in the range of lattice, impurity, and mixed scattering mechanisms

✍ Scribed by Dmitrenko, N. N. ;Kirnas, I. G. ;Kurilo, P. M. ;Litovchenko, P. G. ;Lutsyak, V. S. ;Nitsovich, V. M.

Publisher
John Wiley and Sons
Year
1974
Tongue
English
Weight
181 KB
Volume
26
Category
Article
ISSN
0031-8965

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## Abstract The temperature dependence of the Debye‐Waller factors of vanadium and silicon in V~3~Si and that of the X‐ray Debye temperature are obtained from the integral intensities of X‐ray reflection measured at 11 temperatures ranging from 8 K to 293 K. It shown that the breaks on these curves