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On temperature dependence of Debye-Waller factor in V3Si in the temperature range from 8 to 293 K

✍ Scribed by Acad.; Prof. N. N. Sirota; L. P. Polutchankina

Publisher: John Wiley and Sons
Year: 1981
Tongue: English
Weight: 284 KB
Volume: 16
Category: Article
ISSN: 0232-1300
DOI: 10.1002/crat.19810161010

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✦ Synopsis

Abstract

The temperature dependence of the Debye‐Waller factors of vanadium and silicon in V~3~Si and that of the X‐ray Debye temperature are obtained from the integral intensities of X‐ray reflection measured at 11 temperatures ranging from 8 K to 293 K. It shown that the breaks on these curves are observed at T~br~ = 21.7 K. This fact allows to assume that the phase transition in this compound is accompanied by the rapid change of the atomic vibration frequencies.

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