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Temperature dependence of the dielectric function of silicon using in situ spectroscopic ellipsometry

✍ Scribed by G. Vuye; S. Fisson; V. Nguyen Van; Y. Wang; J. Rivory; F. Abelès

Book ID
107864171
Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
461 KB
Volume
233
Category
Article
ISSN
0040-6090

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## Abstract This work investigates the capability of spectroscopic ellipsometry to measure charge trapping centers in thin dielectric films. Specific interfacial electrostatic fields, induced by electrons injected into charge trapping states at the interface, have been identified that directly affe