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Complex dielectric function of biaxial tensile strained silicon by spectroscopic ellipsometry

✍ Scribed by Vineis, C. J.

Book ID
120011307
Publisher
The American Physical Society
Year
2005
Tongue
English
Weight
117 KB
Volume
71
Category
Article
ISSN
1098-0121

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## Abstract Spectroscopic Ellipsometry was employed to study the etching process of uniaxially strained Si (sSi) layers obtained by direct wafer bonding of Si wafers in a mechanically bent state followed by thinning one of the Si wafers, the donor wafer, by the smart‐cut process, keeping the other,