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Temperature dependence of the carrier mobility in Ag2Se layers grown on NaCl and SiOxsubstrates

✍ Scribed by K. Somogyi; P. Panine; G. Sáfrán


Book ID
112998497
Publisher
Springer-Verlag
Year
1994
Tongue
English
Weight
673 KB
Volume
74
Category
Article
ISSN
1219-7580

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## Abstract The influence of the non‐parabolicity of the valence band on the hole mobility in Si is investigated. The numerical and experimental results can be fitted if for the holes the non‐parabolicity of the energy spectrum as well as their scattering on acoustic and optical phonons are taken i