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Temperature dependence of Ga2O3 micro/nanostructures via vapor phase growth

✍ Scribed by Haifeng Jiang; Yiqing Chen; Qingtao Zhou; Yong Su; Haihua Xiao; Li-ang Zhu


Book ID
113782095
Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
729 KB
Volume
103
Category
Article
ISSN
0254-0584

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## Abstract Epitaxial layers of monoclinic β‐Ga~2~O~3~ were successfully grown on (0001) sapphire and ($ \bar 1 $11)~As~ GaAs substrates using metal‐organic vapor‐phase epitaxy (MOVPE). Triethylgallium (TEGa) and N~2~O were used as precursors for gallium and oxygen, respectively. Growth conditions