✦ LIBER ✦

Temperature dependence of electron transport in GaN/AlGaN quantum cascade detectors

✍ Scribed by S.V. Gryshchenko; M.V. Klymenko; O.V. Shulika; I.A. Sukhoivanov; V.V. Lysak

Book ID: 119373151
Publisher: Elsevier Science
Year: 2012
Tongue: English
Weight: 346 KB
Volume: 52
Category: Article
ISSN: 0749-6036
DOI: 10.1016/j.spmi.2012.06.013

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Sequential tunneling transport in GaN/Al

Sequential tunneling transport in GaN/AlGaN quantum cascade structures

✍ Faisal F. Sudradjat; Wei Zhang; Kristina Driscoll; Yitao Liao; Anirban Bhattacha 📂 Article 📅 2012 🏛 John Wiley and Sons 🌐 English ⚖ 639 KB

Near infrared quantum cascade detector i

Near infrared quantum cascade detector in GaNâAlGaNâAlN heterostructures

✍ Vardi, A.; Bahir, G.; Guillot, F.; Bougerol, C.; Monroy, E.; Schacham, S. E.; Tc 📂 Article 📅 2008 🏛 American Institute of Physics 🌐 English ⚖ 580 KB

Femto-second electron transit time chara

Femto-second electron transit time characterization in GaN/AlGaN quantum cascade detector at 1.5 micron

✍ A. Vardi; S. Sakr; J. Mangeney; P. K. Kandaswamy; E. Monroy; M. Tchernycheva; S. 📂 Article 📅 2011 🏛 American Institute of Physics 🌐 English ⚖ 911 KB

Structure Dependence of Electron Mobilit

Structure Dependence of Electron Mobility in GaN/AlGaN Multiple Quantum Wells

✍ Hoshino, K. ;Someya, T. ;Arakawa, Y. 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 95 KB 👁 2 views

We have investigated electron Hall mobility of high-quality GaN/AlGaN multiple quantum wells (QWs). Electron mobility was enhanced from 875 to 1600 cm 2 /Vs at room temperature in GaN/Al 0.58 Ga 0.42 N QWs when the number of QWs increased from 1 to 10. Atomic force microscopy analysis shows that the

High-speed operation of GaN/AlGaN quantu

High-speed operation of GaN/AlGaN quantum cascade detectors at Î»â1.55âÎ¼m

✍ Vardi, A.; Kheirodin, N.; Nevou, L.; Machhadani, H.; Vivien, L.; Crozat, P.; Tch 📂 Article 📅 2008 🏛 American Institute of Physics 🌐 English ⚖ 518 KB

Temperature dependence of gate–leakage c

Temperature dependence of gate–leakage current in AlGaN/GaN high-electron-mobility transistors

✍ Arulkumaran, S.; Egawa, T.; Ishikawa, H.; Jimbo, T. 📂 Article 📅 2003 🏛 American Institute of Physics 🌐 English ⚖ 430 KB