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Temperature dependence of electrical resistivity in the mixed state in Nd2−xCexCuO4−y

✍ Scribed by T. Fukami; Y. Yamasaki; T. Nishizaki; F. Ichikawa; R. Kondo; T. Aomine; S. Kubo; M. Suzuki

Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
257 KB
Volume
216
Category
Article
ISSN
0921-4526

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✦ Synopsis

Using Nd 2_xCe~CuO4 ,. films, the temperature dependence of electrical resistivity in the mixed state has been measured as a function of magnetic field and its direction from the basal plane. These data have been analyzed by a phenomenological theory on the basis of the thermal fluctuations of the phase in the Josephson junction which exists between layers and the flux creep model under the assumption of independent movement of strings and kinks.

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Resistivity and Hall effect measurements on n-type undoped In 0.17 Ga 0.83 N alloy grown by metalorganic vapor phase epitaxy (MOVPE) technique were carried out as a function of temperature (15-350 K). In 0.17 Ga 0.83 N alloy is regarded as a highly degenerate semiconductor system with a high carrier