Anomalous temperature dependence of the electrical resistivity in In0.17Ga0.83N

✍ Scribed by A. Yildiz; S.B. Lisesivdin; M. Kasap; M. Bosi

• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 1008 KB
• Volume: 149
• Category: Article
• ISSN: 0038-1098
• DOI: 10.1016/j.ssc.2008.11.026

✦ Synopsis

Resistivity and Hall effect measurements on n-type undoped In 0.17 Ga 0.83 N alloy grown by metalorganic vapor phase epitaxy (MOVPE) technique were carried out as a function of temperature (15-350 K). In 0.17 Ga 0.83 N alloy is regarded as a highly degenerate semiconductor system with a high carrier concentration of ∼9.2 × 10 19 cm -3 . An anomalous resistivity behavior is observed over the whole temperature range. The temperature dependent resistivity of In 0.17 Ga 0.83 N exhibits a metalsemiconductor transition (MST) around 180 K. The temperature coefficient of resistivity is negative at low temperatures (T < 180 K) and it becomes positive at relatively high temperatures (T > 180 K).

In addition to this, a negative magnetoresistivity (MR) has been observed below 180 K. The temperature dependent resistivity of In 0.17 Ga 0.83 N alloy is explained in the terms of the electron-electron interaction (EEI) and the weak localization (WL) phenomenon at low temperatures (T < 180 K). At high temperatures (T > 180 K) the temperature dependent resistivity obeys T 2 law.