Temperature dependence of drift mobility in the presence of trap-recombination centers
β Scribed by G. I. Bulakh; I. V. Ostrovskii
- Book ID
- 112428873
- Publisher
- Springer
- Year
- 1977
- Tongue
- English
- Weight
- 416 KB
- Volume
- 20
- Category
- Article
- ISSN
- 1573-9228
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π SIMILAR VOLUMES
Time-of-fltght sturhes of the drtft moblhty of holus m crystalline todoform are reported. The mobdttxs were mcxurcd along Ihe crystal w-fold aw (cl and tn the duection perpend~cuhr to c Mobday wlues above 270 K follow 3 Tmn dcpcndcnce wth n = 0 3 and I 5 for the two duccGons, rcspccwely. Below 270 K
## Abstract Hole transport properties in highβpurity single crystal CVD diamond samples were studied using the time of flight technique with optical excitation of the carriers. The measurements were taken at different temperatures in the interval 80β470 K. By varying the intensity of the optical ex