✦ LIBER ✦

Temperature characteristics of InGaAs/GaAs vertical cavity surface emitting laser

✍ Scribed by Hong-wei Qu; Xia Guo; Li-min Dong; Hong-hang Wang; Jun Deng; Peng Lian; De-shu Zhou; Guang-di Shen

Book ID: 105699340
Publisher: Tianjin University of Technology
Year: 2005
Tongue: English
Weight: 535 KB
Volume: 1
Category: Article
ISSN: 1673-1905
DOI: 10.1007/bf03033613

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

InGaAs vertical-cavity surface-emitting

InGaAs vertical-cavity surface-emitting lasers

✍ Geels, R.S.; Corzine, S.W.; Coldren, L.A. 📂 Article 📅 1991 🏛 IEEE 🌐 English ⚖ 994 KB

Lasing characteristics of GaAs(311)A sub

Lasing characteristics of GaAs(311)A substrate based InGaAs-GaAs vertical-cavity surface-emitting lasers

✍ Takahashi, M.; Egami, N.; Mukaihara, T.; Koyama, F.; Iga, K. 📂 Article 📅 1997 🏛 IEEE 🌐 English ⚖ 155 KB

InGaAs/GaAs vertical cavity surface emit

InGaAs/GaAs vertical cavity surface emitting laser with hybrid top mirror

✍ R. Houdré; U. Oesterle; C. Wüthrich; C.A. Berseth; M. Gailhanou; J. Faist 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 276 KB

Results on a vertical cavity surface emitting laser with InGaAs/GaAs quantum wells and a hybrid AIAs/GaAs Bragg reflector with a metal top mirror are presented. The structure has a threshold current density of 2.1kAcm -2 and a 6% external quantum efficiency (uncorrected for substrate absorption and

InGaAs/GaAs vertical-cavity surface-emit

InGaAs/GaAs vertical-cavity surface-emitting lasers with AlAs selective oxide layers

✍ Nobuaki Hatori; Toshikazu Mukaihara; Noriyuki Ohnoki; Akimasa Mizutani; Makoto A 📂 Article 📅 1998 🏛 John Wiley and Sons 🌐 English ⚖ 220 KB 👁 1 views

A laser operating at low threshold current is indispensable for the construction of superparallel optical interconnections. Initially we examine the current threshold characteristics of surface emitting InGaAs/GaAs lasers, and demonstrate the possibility for working with a threshold current below 10

Lasing characteristics of InGaAs-GaAs po

Lasing characteristics of InGaAs-GaAs polarization controlled vertical-cavity surface-emitting laser grown on GaAs (311) B substrate

✍ Nishiyama, N.; Mizutani, A.; Hatori, N.; Arai, M.; Koyama, F.; Iga, K. 📂 Article 📅 1999 🏛 IEEE 🌐 English ⚖ 309 KB

P-type delta-doped InGaAs/GaAs quantum w

P-type delta-doped InGaAs/GaAs quantum well vertical-cavity surface-emitting lasers

✍ Nobuaki Hatori; Akimasa Mizutani; Nobuhiko Nishiyama; Fumichika Motomura; Fumio 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 127 KB 👁 1 views

The vertical-cavity surface-emitting laser (VCSEL) operating with low threshold current is a promising way to realize future parallel optical interconnects. In this study, we propose a novel structure of p-type delta-doped In-GaAs/GaAs quantum wells for low-threshold, high-speed VCSELs. Edge-emittin