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Temperature Characteristics of 1.3-m p-Doped InAs–GaAs Quantum-Dot Vertical-Cavity Surface-Emitting Lasers

✍ Scribed by Tong, C.Z.; Xu, D.W.; Yoon, S.F.; Ding, Y.; Fan, W.J.


Book ID
114570470
Publisher
IEEE
Year
2009
Tongue
English
Weight
258 KB
Volume
15
Category
Article
ISSN
1077-260X

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We apply 8-band k.p model to study InAs/GaAs quantum dots (QDs). The strain was calculated using the valence force field (VFF) model which includes the four nearest-neighbour interactions. For the optical properties, we take into account both homogeneous and non-homogeneous broadening for the optica