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Fabrication and modulation characteristics of 1.3 µm p-doped InAs quantum dot vertical cavity surface emitting lasers

✍ Scribed by Ding, Y; Fan, W J; Xu, D W; Tong, C Z; Yoon, S F; Zhang, D H; Zhao, L J; Wang, W; Liu, Y; Zhu, N H


Book ID
118180202
Publisher
Institute of Physics
Year
2009
Tongue
English
Weight
639 KB
Volume
42
Category
Article
ISSN
0022-3727

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We apply 8-band k.p model to study InAs/GaAs quantum dots (QDs). The strain was calculated using the valence force field (VFF) model which includes the four nearest-neighbour interactions. For the optical properties, we take into account both homogeneous and non-homogeneous broadening for the optica