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1.3-/spl mu/m InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE

✍ Scribed by Yu, H.C.; Wang, J.S.; Su, Y.K.; Chang, S.J.; Lai, F.I.; Chang, Y.H.; Kuo, H.C.; Sung, C.P.; Yang, H.P.D.; Lin, K.F.; Wang, J.M.; Chi, J.Y.; Hsiao, R.S.; Mikhrin, S.

Book ID: 118183276
Publisher: IEEE
Year: 2006
Tongue: English
Weight: 163 KB
Volume: 18
Category: Article
ISSN: 1041-1135
DOI: 10.1109/lpt.2005.863166

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