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Temperature- and excitation-dependent carrier diffusivity and recombination rate in 4H-SiC

✍ Scribed by Ščajev, Patrik; Jarašiūnas, Kęstutis

Book ID
121477463
Publisher
Institute of Physics
Year
2013
Tongue
English
Weight
499 KB
Volume
46
Category
Article
ISSN
0022-3727

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## Abstract Time‐resolved four‐wave mixing and photoluminescence techniques have been combined for studies of MOCVD‐grown In~__x__~Ga~1–__x__~N/GaN/sapphire heterostructures with different indium content (0.08 < __x__ < 0.15). In‐plane diffusion and recombination of spatially‐modulated carriers, co