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Tem study of microdefects in epitaxially grown silicon

โœ Scribed by C.W.T. Bulle-Lieuwma; M.P.A. Viegers


Publisher
Elsevier Science
Year
1984
Tongue
English
Weight
95 KB
Volume
14
Category
Article
ISSN
0304-3991

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Some impurities are known to modify the properties of grown-in microdefects in Si crystals at relatively low concentrations when the only operating mechanism is trapping of either vacancies (V) or self-interstitials (I), or both, by the major impurity state. First of all, doping affects the critical