𝔖 Bobbio Scriptorium
✦   LIBER   ✦

TEM investigation of iron disilicide films on Si(001) grown by molecular beam epitaxy

✍ Scribed by Nissen, H.-U. ;Müller, E. ;Deller, H. R. ;Von Känel, H.

Publisher
John Wiley and Sons
Year
1995
Tongue
English
Weight
975 KB
Volume
150
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Epitaxial growth of Bi2Sr2CuOx films ont
Epitaxial growth of Bi2Sr2CuOx films onto Si(001) by molecular beam epitaxy
✍ T Tambo; T Arakawa; A Shimizu; S Hori; C Tatsuyama 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 778 KB

We have studied the epitaxial growth of Bi Sr CuO superconductor films onto a Si 001 substrate using a double buffer 2 2 x Ž . layer consisting of SrTiO and SrO by molecular beam epitaxy MBE . The Bi Sr CuO films are grown by a 3 2 2 x Ž . co-evaporation method with an oxygen radical source. The Bi

A TEM investigation of the initial stage
A TEM investigation of the initial stages of InSb growth on GaAs (001) by molecular beam epitaxy
✍ X Zhang; A.E Staton-Bevan; D.W Pashley 📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 794 KB

## This investigation focuses attention on the very early stages of MBE growth of InSb on GaAs (001). Both conventional and high resolution TEA1 have been used to study InSb layers varying between 5 and 300 monolayers in average thickness. The observations provide conclusive evidence of three-dime