A TEM investigation of the initial stages of InSb growth on GaAs (001) by molecular beam epitaxy

✍ Scribed by X Zhang; A.E Staton-Bevan; D.W Pashley

• Publisher: Elsevier Science
• Year: 1990
• Tongue: English
• Weight: 794 KB
• Volume: 7
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(90)90027-9

✦ Synopsis

This investigation focuses attention on the very early stages of MBE growth of InSb on GaAs (001). Both conventional and high resolution TEA1

have been used to study InSb layers varying between 5 and 300 monolayers in average thickness. The observations provide conclusive evidence of three-dimensional nucleation and island growth. Complete lattice relaxation is brought about by a network of 1/2(110) Lomer dislocations at the InSb/GaAs interface and there is strong evidence for the presence of an additional sphalerite interfacial phase. Threading dislocations and planar defects in the InSb epilayer are mainly introduced during island coalescence.